NEWS AND UPDATES
Khan Lab @ IEDM 2021
We will be presenting the most elaborate description ever of trap dynamics in ferroelectric field-effect transistors (paper no. 6-1) and a 5-orders of magnitude (10^5 times) improvement of the read-after-write delay in n-type Si FEFETs (paper no. 19-3), at the 2021 International Electron Devices Meeting (IEDM), happening next week. The research was led by Nujhat Tasneem and Zheng Wang, in collaboration with many groups across the globe.
Thanks to our sponsors: ASCENT, one of the six centers in the JUMP (a Semiconductor Research Corporation program sponsored by Defense Advanced Research Projects Agency (DARPA)), the SRC Global Research Collaboration program, and the National Science Foundation (NSF).
Dr Khan chosen for DARPA Young Faculty Award
Dr. Asif Khan has been chosen for a DARPA Young Faculty Award. Dr. Khan is receiving this award for his research on ferroelectric field-effect transistors for embedded non-volatile memory applications. Ferroelectric field-effect transistors is one of the most-promising device technologies for artificial intelligence (AI) and machine learning (ML) hardware, due to its energy efficiency and compatibility with high-volume semiconductor manufacturing. The project will focus on solving the critical voltage problem of this device technology, by identifying and implementing new strategies for interface defect reduction in and the down-scaling of the ferroelectric gate-dielectric stack.
Dr Khan wins NSF CAREER Award
Dr. Asif Khan has been named as a recipient of the NSF CAREER Award. The title of Khan’s award is “Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing,” and it will start on March 15, 2021 and end on February 28, 2026.
Nujhat and Prasanna collaborate to demonstrate the steady-state nature of charge boost
Read the article, published in APL – Special Topics: Ferroelectricity in Hafnium Oxide: Materials and Devices , here! They also presented the work at MRS Spring Meet 2020.