What is the future of computing?
What are ferroelectrics and Antiferroelectrics?
The ferroelectric memory is back!
We conceptualize and fabricate solid state electronic devices that leverage interesting physics and novel phenomena in emerging materials (such as ferroelectrics, antiferroelectrics and strongly correlated/quantum materials) to overcome the “fundamental” limits in computation and to address the most pressing challenges in the semiconductor industry and the computing paradigms.
Details of our program are available at Research and Publication pages and in these video presentations: E3S2015, IEN2017, ISVLSI2018. Key publications in our current interests are as follows. 1. Technologies for Machine Learning/AI/Neuromorphic computing: IEDM 2018 (13.3), EDL 2017 2. Negative capacitance: IEDM 2018 (9.3), Nature Materials 2015, IEDM 2011, APL 2011 3. Antiferroelectrics: APL 2018
Our program is currently sponsored by the National Science Foundation (NSF), the Semiconductor Research Corporation (SRC)-Global Research Collaboration (GRC) and the Joint University Microelectronics Program (JUMP), a consortium of industrial participants, SRC and the Defense Advanced Research Projects Agency (DARPA).