Khan Lab

Electronics with Ferroelectric and Quantum Materials

Publications

PUBLICATIONS

  1. Lin, B., Choe, G., Hur, J., Khan, A. I., Yu, S., & Wang, H. (2021, June). Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave Applications. In 2021 Device Research Conference (DRC) (pp. 1-2). IEEE.
  2. Tasneem, N., Islam, M. M., Wang, Z., Chen, H., Hur, J., Triyoso, D., … & Khan, A. (2021). The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design. IEEE Electron Device Letters.
  3. Garg, C., Chauhan, N., Deng, S., Khan, A. I., Dasgupta, S., Bulusu, A., & Ni, K. (2021). Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET. IEEE Electron Device Letters.
  4. Miller, N. E., Wang, Z., Dash, S., Khan, A. I., & Mukhopadhyay, S. (2021, June). Characterization of Drain Current Variations in FeFETs for PIM-based DNN Accelerators. In 2021 IEEE 3rd International Conference on Artificial Intelligence Circuits and Systems (AICAS) (pp. 1-4). IEEE.
  5. Hur, J., Luo, Y. C., Wang, Z., Shim, W., Khan, A. I., & Yu, S. (2021, May). A Technology Path for Scaling Embedded FeRAM to 28nm with 2T1C Structure. In 2021 IEEE International Memory Workshop (IMW) (pp. 1-4). IEEE.
  6. Hur, J., Luo, Y. C., Tasneem, N., Khan, A. I., & Yu, S. (2021). Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process. IEEE Transactions on Electron Devices.
  7. Hoffmann, M., Wang, Z., Tasneem, N., Zubair, A., Ravindran, P. V., Tian, M., … & Khan, A. I. (2021). Antiferroelectric negative capacitance from a structural phase transition in zirconia. arXiv preprint arXiv:2104.10811.
  8. Choe, G., Shim, W., Wang, P., Hur, J., Khan, A. I., & Yu, S. (2021). Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing. IEEE Transactions on Electron Devices, 68(5), 2543-2548.
  9. Tasneem, N., Ravindran, P. V., Wang, Z., Gomez, J., Hur, J., Yu, S., … & Khan, A. I. (2021). Differential charge boost in hysteretic ferroelectric–dielectric heterostructure capacitors at steady state. Applied Physics Letters, 118(12), 122901.
  10. Hur, J., Wang, P., Wang, Z., Choe, G., Tasneem, N., Khan, A. I., & Yu, S. (2020, December). Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor. In 2020 IEEE International Electron Devices Meeting (IEDM) (pp. 39-5). IEEE.
  11. Wang, P., Peng, X., Chakraborty, W., Khan, A. I., Datta, S., & Yu, S. (2020, December). Cryogenic Benchmarks of Embedded Memory Technologies for Recurrent Neural Network based Quantum Error Correction. In 2020 IEEE International Electron Devices Meeting (IEDM) (pp. 38-5). IEEE.
  12. Wang, Z., Islam, M. M., Wang, P., Deng, S., Yu, S., Khan, A. I., & Ni, K. (2020, December). Depolarization Field Induced Instability of Polarization States in HfO 2 Based Ferroelectric FET. In 2020 IEEE International Electron Devices Meeting (IEDM) (pp. 4-5). IEEE.
  13. Khan, A. I., Keshavarzi, A., & Datta, S. (2020). The future of ferroelectric field-effect transistor technology. Nature Electronics, 3(10), 588-597.
  14. Luo, Y. C., Hur, J., Wang, P., Khan, A. I., & Yu, S. (2020). Non-volatile, small-signal capacitance in ferroelectric capacitors. Applied Physics Letters, 117(7), 073501.
  15. Wang, P., Wang, Z., Sun, X., Hur, J., Datta, S., Khan, A. I., & Yu, S. (2020). Investigating ferroelectric minor loop dynamics and history effect—Part II: Physical modeling and impact on neural network training. IEEE Transactions on Electron Devices, 67(9), 3598-3604.
  16. Wang, P., Wang, Z., Sun, X., Hur, J., Datta, S., Khan, A. I., & Yu, S. (2020). Investigating ferroelectric minor loop dynamics and history effect—Part I: Device characterization. IEEE Transactions on Electron Devices, 67(9), 3592-3597.
  17. Hur, J., Tasneem, N., Choe, G., Wang, P., Wang, Z., Khan, A. I., & Yu, S. (2020). Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition. Nanotechnology, 31(50), 505707.
  18. Y Luo, J Hur, P Wang, A. I. Khan and S Yu, “Modeling Multi-states in Ferroelectric Tunnel Junction,” 2020 Device Research Conference (DRC), pp. 1-2, (2020)
  19. S Lombardo, C Nelson, K Chae, S Reyes-Lillo, M Tian, N Tasneem, Z Wang et al. “Atomic-scale imaging of polarization switching in an (anti-) ferroelectric memory material: Zirconia (ZrO2).” In 2020 IEEE Symposium on VLSI Technology, pp. 1-2. (2020).
  20. J Hur, Y-C Luo, PWang, N Tasneem, A. I. Khan, and S Yu. “Ferroelectric tunnel junction optimization by plasma-enhanced atomic layer deposition.” In 2020 IEEE Silicon Nanoelectronics Workshop (SNW), pp. 11-12. (2020)
  21. P Wang, A. I. Khan, S Yu, “Cryogenic behavior of NbO2 based threshold switching devices as oscillation neurons,” Applied Physics Letters (2020)
  22. Hoffmann, M., Ravindran, P. V., & Khan, A. I. “A microscopic “toy” model of ferroelectric negative capacitance.” In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1-4). (2020)
  23. P Wang, W Shim, Z Wang, J Hur, S Datta, AI Khan, S Yu, “Drain-Erase Scheme in Ferroelectric Field Effect Transistor—Part II: 3-D-NAND Architecture for In-Memory Computing,” IEEE Transactions on Electron Devices (2020)
  24. P Wang, Z Wang, W Shim, J Hur, S Datta, AI Khan, S Yu, “Drain-Erase Scheme in Ferroelectric Field-Effect Transistor–Part I: Device Characterization,” IEEE Transactions on Electron Devices (2020)
  25. Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan, “Cryogenic characterization of a ferroelectric field-effect-transistor,” Applied Physics Letters (2020)
  26. S. Pentapati, R. Perumal, S. Khandelwal, A. I. Khan and S. K. Lim, “Optimal Ferroelectric Parameters for Negative Capacitance Field-Effect Transistors Based on Full-Chip Implementations—Part II: Scaling of the Supply Voltage,” IEEE Transactions on Electron Devices (2020)
  27. S Pentapati, R Perumal, S Khandelwal, AI Khan, SK Lim, “Cross-domain optimization of ferroelectric parameters for negative capacitance transistors—Part I: Constant supply voltage,” IEEE Transactions on Electron Devices (2019)
  28. Z Wang, AI Khan, “Ferroelectric Relaxation Oscillators and Spiking Neurons,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2019)
  29. Y. Long, D. Kim, E. Lee, P. Saha, B. A. Mudassar, X. She, A. I. Khan, S. Mukhopadhyay, “A Ferroelectric FET based Processing-in-Memory Architecture for DNN Acceleration,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2019) (link)
  30. Y. Fang, J. Gomez, Z. Wang, S. Datta, A. I. Khan, A. Raychowdhury. “Neuro-mimetic Dynamics of a Ferroelectric FET Based Spiking Neuron,” IEEE Electron Device Letters (2019) (link)
  31. A. K. Yadav, K. X. Nguyen, Z. Hong, P. García-Fernández, P. Aguado-Puente, C. T. Nelson, S. Das, B. Prasad, D. Kwon, S. Cheema, A. I. Khan, J. Iniguez, J. Junquera, L.-Q. Chen, D. A. Muller, R. Ramesh, S. Salahuddin, “Spatially resolved steady-state negative capacitance,” Nature (2019) (link)
  32. Y. Liu, Z. Wang, T. Orvis, D. Sarkar, R. Kapadia, A. I. Khan, J. Ravichandran, “Epitaxial growth and Dielectric Characterization of Atomically Smooth 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films,” J. Vac. Sci. Tech. A. 37, 011502 (2019).
  33. Z. Wang, B. Crafton, J. Gomez, R. Xu, A. Luo, Z. Krivokapic, L. Martin, S. Datta, A. Raychowdhury, A. I. Khan, “Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering,” The 64th International Electron Devices Meeting (IEDM 2018), 2018 (paper 13.3, research highlight in Nature Electronics link, pdf ).
  34. A. I. Khan, “On the microscopic origin of negative napacitance in ferroelectric materials: A toy model,” The 64th International Electron Devices Meeting (IEDM 2018), 2018 (invited, paper 9.3).
  35. Y. Long, T. Na, P. Rastogi, K. Rao, A. I. Khan, S Yalamanchili and S. Mukhopadhyay, “A ferroelectric FET based power-efficient architecture for data-intensive computing,” Proc. International Conference on Computer Aided Design (ICCAD), 2018.
  36. N. Tasneem, A. I. Khan, “On the possibility of dynamically tuning and collapsing the ferroelectric hysteresis/memory window in an asymmetric double gate MOS device: A path to a reconfigurable logic-memory device,” Proc. 76th Device Research Conference (DRC), 2018.
  37. Z. Wang*, A. A. Gaskell*, M. Dopita, D. Kriegner, N. Tasneem, J. Mack, N. Mukherjee, Z. Karim, A. I. Khan, “Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals,” Appl. Phys. Lett. 112, 222902 (2018). (*Equal contribution, Editor’s pick)
  38. M. Hoffmann, A. I. Khan, C. Serrao, Z. Lu, S. Salahuddin, M. Pešić, S. Slesazeck, U. Schroeder, T. Mikolajick. “Ferroelectric negative capacitance domain dynamics,” J. Appl. Phys. 123, 184101 (2018).
  39. Z. Lu, C. Serrao, A. I. Khan, J. D. Clarkson, J .C. Wong, R. Ramesh & S. Salahuddin. “Electrically induced, non-volatile, metal-insulator transition in a ferroelectric-controlled MoS2 transistor,”Appl. Phys. Lett.  112(4), 043107 (2018).
  40. A. I. Khan*, M. Hoffmann*, K. Chatterjee, Z. Lu, R. Xu, C. Serrao, S. Smith, L. W. Martin, C. Hu, R. Ramesh & S.Salahuddin, “Differential voltage amplification from ferroelectric negative capacitance,” Appl. Phys. Lett. 111, 253501 (2017). (Cover article, editor’s pick. *Equal contribution)
  41. Z. Wang, S. Khandelwal & A. I. Khan, “Ferroelectric oscillators and their coupled networks,” IEEE Electron Dev. Lett. 38, 1614 (2017).

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