NEWS
Priyankka Gundlapudi Ravikumar to present at IEEE IRPS
Priyankka will present Paper 2C.4 (Invited, IIRW Best Student Paper): “First
write pulse-induced interface damage in ferroelectric field-effect transistors
traps” and Paper 6B.4: “Understanding Correlation Between Memory Window Closure, Leakage, and Read Delay Effects for FeFET Reliability Improvement: Role of IL and FE Traps” at IEEE Interational Reliability Physics Symposium (IRPS) 2025.
Prasanna Venkat Ravindran to present at IEEE IRPS
Prasanna will present Paper 6B.1 (Highlight Paper): “Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-year Retention” at IEEE Interational Reliability Physics Symposium (IRPS) 2025.
Nashrah Afroze to present at IEEE IRPS
Nashrah will present Paper 2C.3: “Multi-Scale Modeling-Driven
Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen
Reservoir Layer (ORL) for Improved Endurance” at IEEE Interational Reliability Physics Symposium (IRPS) 2025.
Lance Fernandes awarded 2024 IEEE Electron Devices Society Masters Scholarship
The Fellowship is given by IEEE Electron Device Socity. It is a one-year fellowship awarded to promote, recognize, and support graduate Masters level study and research within the Electron Devices Society’s field of interest.
Three fellowships are awarded each year adn only one candidate can win per educational institution.
https://eds.ieee.org/education/student-fellowships/masters-student-fellowship
Priyankka Gundlapudi Ravikumar wins Best Paper Award at IIRW 2024
Priyankka’s Next-Generation Computing Memory Research undertook the challenge of bringing clarity to one major reliability concerns in her paper, “First write pulse-induced interface damage in ferroelectric field-effect transistors”.
The research, which reported one a new phenomenon in FEFET known as the first switch effect and explains the phenomenon’s origin, recently won the Best Student Paper Award at the 2024 IEEE International Integrated Reliability Workshop.
Prasanna Venkat Ravindran Introduces Disturb Mitigation Technique for Ferroelectric NAND Applications
Prasanna Venkatesan, in collaboration with Samsung, published a novel technique in IEEE Electron Device Letters (Editor’s Pick, December 15, 2024) to address “disturb” issues in ferroelectric field-effect transistors (FeFETs) for 3D NAND. The technique mitigates trap states and polarization switching challenges, crucial for enabling NAND Flash scaling beyond 1000 layers, while remaining compatible with standard NAND controllers.
Nashrah Afroze Wins Best Presentation at JUMP 2.0 SUPREME Annual Review
Nashrah Afroze, a third-year Ph.D. candidate, won the Best Presentation Award at the JUMP 2.0 SUPREME Annual Review for her research, “Interface Engineering for High-Performance Memories at Elevated Temperatures.” Her work addresses memory reliability in extreme conditions, critical for AI and automotive applications. Afroze is advised by ECE associate professor Asif Islam Khan.
https://research.gatech.edu/afroze-wins-best-presentation-jump-20-supreme-annual-review